rev 1.2 1 2007-02-08 sipmos ? small-signal transistor ? n channel enhancement mode avalanche rated v gs(th) = 2.1 ... 4.0 v pin 1 pin 2 pin 3 pin 4 g d s d type v ds i d r ds(on) package marking bsp 373 100 v 1.7 a 0.3 ? pg-sot-223 bsp 373 type rohs compliant tape and reel information bsp 373 yes l6327: 1000 pcs/reel maximum ratings parameter symbol values unit continuous drain current t a = 28 ?c i d 1.7 a dc drain current, pulsed t a = 25 ?c i dpuls 6.8 avalanche energy, single pulse i d = 1.7 a, v dd = 25 v, r gs = 25 ? l = 23.3 mh, t j = 25 ?c e as 45 mj gate source voltage v gs 20 v power dissipation t a = 25 ?c p tot 1.8 w bsp 373 pb-free lead plating; rohs compliant available ?
bsp 373 rev 1.2 2 2007-02-08 maximum ratings parameter symbol values unit chip or operating temperature t j -55 ... + 150 c storage temperature t stg -55 ... + 150 thermal resistance, chip to ambient air r thja 70 k/w thermal resistance, junction-soldering point 1 ) r thjs 10 din humidity category, din 40 040 e iec climatic category, din iec 68-1 55 / 150 / 56 1) transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm 2 copper area for drain connection electrical characteristics, at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain- source breakdown voltage v gs = 0 v, i d = 0.25 ma, t j = 0 c v (br)dss 100 - - v gate threshold voltage v gs = v ds, i d = 1 ma v gs(th) 2.1 3 4 zero gate voltage drain current v ds = 100 v, v gs = 0 v, t j = 25 c v ds = 100 v, v gs = 0 v, t j = 125 c i dss - - 10 0.1 100 1 a gate-source leakage current v gs = 20 v, v ds = 0 v i gss - 10 100 na drain-source on-state resistance v gs = 10 v, i d = 1.7 a r ds(on) - 0.16 0.3
bsp 373 rev 1.2 3 2007-02-08 electrical characteristics, at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. dynamic characteristics transconductance v ds 2 * i d * r ds(on)max, i d = 1.7 a g fs 1.5 2.8 - s input capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c iss - 400 550 pf output capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c oss - 125 190 reverse transfer capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c rss - 70 105 turn-on delay time v dd = 30 v, v gs = 10 v, i d = 0.3 a r gs = 50 t d(on) - 10 15 ns rise time v dd = 30 v, v gs = 10 v, i d = 0.3 a r gs = 50 t r - 30 45 turn-off delay time v dd = 30 v, v gs = 10 v, i d = 0.3 a r gs = 50 t d(off) - 85 115 fall time v dd = 30 v, v gs = 10 v, i d = 0.3 a r gs = 50 t f - 60 80
bsp 373 rev 1.2 4 2007-02-08 electrical characteristics, at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. reverse diode inverse diode continuous forward current t a = 25 c i s - - 1.7 a inverse diode direct current,pulsed t a = 25 c i sm - - 6.8 inverse diode forward voltage v gs = 0 v, i f = 1.7 a, t j = 25 c v sd - 0.8 1.1 v reverse recovery time v r = 30 v, i f = l s, d i f /d t = 100 a/s t rr - - - ns reverse recovery charge v r = 30 v, i f = l s, d i f /d t = 100 a/s q rr - - - c
bsp 373 rev 1.2 5 2007-02-08 power dissipation p tot = ( t a ) 0 20 40 60 80 100 120 c 160 t a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 w 2.0 p tot drain current i d = ( t a ) parameter: v gs 10 v 0 20 40 60 80 100 120 c 160 t a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 a 1.8 i d safe operating area i d =f( v ds ) parameter : d = 0, t c =25 c transient thermal impedance z th ja = ( t p ) parameter: d = t p / t -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 k/w z thj a 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s t p single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
bsp 373 rev 1.2 6 2007-02-08 typ. output characteristics i d = v ds ) parameter: t p = 80 s 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v 5.0 v ds 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 a 3.8 i d v gs [v] a a 4.0 b b 4.5 c c 5.0 d d 5.5 e e 6.0 f f 6.5 g g 7.0 h h 7.5 i i 8.0 j j 9.0 k k 10.0 l p tot = 2w l 20.0 typ. drain-source on-resistance r ds (on) = i d ) parameter: t p = 80 s, t j = 25 c 0.0 0.4 0.8 1.2 1.6 2.0 a 2.8 i d 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.9 r ds (on) v gs [v] = a a 4.0 b b 4.5 c c 5.0 d d 5.5 e e 6.0 f f 6.5 g g 7.0 h h 7.5 i i 8.0 j j 9.0 k k 10.0 l l 20.0 typ. transfer characteristics i d = f ( v gs ) parameter: t p = 80 s 0 1 2 3 4 5 6 7 8 v 10 v gs 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 a 6.5 i d typ. forward transconductance g fs = f ( i d ) parameter: t p = 80 s, 0.0 1.0 2.0 3.0 4.0 a 6.0 i d 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 s 4.5 g fs
bsp 373 rev 1.2 7 2007-02-08 drain-source on-resistance r ds (on) = ( t j ) parameter: i d = 1.7 a, v gs = 10 v -60 -20 20 60 100 c 160 t j 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 0.65 0.75 r ds (on) typ 98% gate threshold voltage v gs (th) = ( t j ) parameter: v gs = v ds , i d = 1 ma 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 v 4.6 v gs(th) -60 -20 20 60 100 c 160 t j 2% typ 98% typ. capacitances c = f ( v ds ) parameter: v gs =0v, f = 1 mhz 0 5 10 15 20 25 30 v 40 v ds -2 10 -1 10 0 10 1 10 nf c c rss c oss c iss forward characteristics of reverse diode i f = ( v sd ) parameter: t j , t p = 80 s -2 10 -1 10 0 10 1 10 a i f 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v 3.0 v sd t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%)
bsp 373 rev 1.2 8 2007-02-08 avalanche energy e as = ( t j ) parameter: i d = 1.7 a, v dd = 25 v r gs = 25 , l = 23.3 mh 20 40 60 80 100 120 c 160 t j 0 5 10 15 20 25 30 35 40 mj 50 e as drain-source breakdown voltage v (br)dss = ( t j ) -60 -20 20 60 100 c 160 t j 90 92 94 96 98 100 102 104 106 108 110 112 114 116 v 120 v (br)dss safe operating area i d =f( v ds ) parameter : d = 0.01, t c =25 c
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